Resistive Random-Access Memory
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) pc memory that works by changing the resistance across a dielectric strong-state material, also known as a memristor. One major benefit of ReRAM over different NVRAM technologies is the power to scale beneath 10 nm. ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and part-change memory (PCM) in that they modify dielectric materials properties. CBRAM entails one electrode providing ions that dissolve readily in an electrolyte material, while PCM entails producing sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous section modifications. By contrast, ReRAM includes generating defects in a thin oxide layer, generally known as oxygen vacancies (oxide bond areas the place the oxygen has been eliminated), which may subsequently charge and drift beneath an electric area. The motion of oxygen ions and vacancies within the oxide would be analogous to the motion of electrons and holes in a semiconductor. Though ReRAM was initially seen as a substitute technology for flash memory, the cost and performance advantages of ReRAM have not been enough for firms to proceed with the replacement.
Apparently, a broad vary of materials can be utilized for ReRAM.
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) pc memory that works by changing the resistance across a dielectric strong-state material, also known as a memristor. One major benefit of ReRAM over different NVRAM technologies is the power to scale beneath 10 nm. ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and part-change memory (PCM) in that they modify dielectric materials properties. CBRAM entails one electrode providing ions that dissolve readily in an electrolyte material, while PCM entails producing sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous section modifications. By contrast, ReRAM includes generating defects in a thin oxide layer, generally known as oxygen vacancies (oxide bond areas the place the oxygen has been eliminated), which may subsequently charge and drift beneath an electric area. The motion of oxygen ions and vacancies within the oxide would be analogous to the motion of electrons and holes in a semiconductor. Though ReRAM was initially seen as a substitute technology for flash memory, the cost and performance advantages of ReRAM have not been enough for firms to proceed with the replacement.
Apparently, a broad vary of materials can be utilized for ReRAM.